Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorous tunnel field-effect transistor (TFET) that shows 10-times lower switching power consumption as well as 10,000-times lower standby power consumption than conventional complementary metal-oxide-semiconductor (CMOS) transistors.
Read moreScientists from the Skoltech Center for Energy Science and Technology (CEST) and the Institute for Problems of Chemical Physics of Russian Academy of Sciences have developed a novel approach for preparing thin semiconductor fullerene films. The method enables fabrication of organic electronics without using toxic organic solvents and costly vacuum technologies, thus reducing the environmental risks and making organic electronics more accessible.
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