organic-electronic

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorous tunnel field-effect transistor (TFET) that shows 10-times lower switching power consumption as well as 10,000-times lower standby power consumption than conventional complementary metal-oxide-semiconductor (CMOS) transistors.

Gas and water permeation barrier films play a vital part in applications ranging from food and pharmaceutical packaging to electronic devices. Two-dimensional (2D) materials, like graphene, are highly promising as ultra-high barrier materials, and their atomic thinness, mechanical stability, optical transparency and thermal properties offers many new possibilities and device form factors.