19 août 2019

[Thin films] – Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate

Accueil / Actualités / [Thin films] – Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
Flèche contenu
Crystalline AsGa thin film Growth - Codex International

Crystalline zinc blende GaAs has been grown on a trigonal c-plane sapphire substrate by molecular beam epitaxy. The initial stage of GaAs thin film growth has been investigated extensively in this paper. When grown on c-plane sapphire, it takes (111) crystal orientation with twinning as a major problem. Direct growth of GaAs on sapphire results in three-dimensional GaAs islands, almost 50% twin volume, and a weak in-plane correlation with the substrate. Introducing a thin AlAs nucleation layer results in complete wetting of the substrate, better in-plane correlation with the substrate, and reduced twinning to 16%. Further, we investigated the effect of growth temperature, pregrowth sapphire substrate surface treatment, and in-situ annealing on the quality of the GaAs epilayer. We have been able to reduce the twin volume below 2% and an X-ray diffraction rocking curve line width to 223 arcsec. A good quality GaAs on sapphire can result in the implementation of microwave photonic functionality on a photonic chip.

Découvrez aussi
[Nanotechnology] – Nanotechnology in fiction 16 février 2021

The ability to communicate new advances in science and technology has never been more important, and in that regard innovations with nanotechnology are growing more rapidly than ever with benefits to both society and the economy.

Lire la suite
[Semiconductors] – Is quantum teleportation an option for future semi-conductors? 23 février 2020

Quantum teleportation shows remarkable promise as being critical for the production of semiconductors in the future. The problem lies in trying to understand and transmit information via quantum entanglement.

Lire la suite