[Organic Electronic] – Black phosphorous tunnel field-effect transistor as an ultra-low power switch
22 février 2020
Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorous tunnel field-effect transistor (TFET) that shows 10-times lower switching power consumption as well as 10,000-times lower standby power consumption than conventional complementary metal-oxide-semiconductor (CMOS) transistors.
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[QLEDs] – Bilateral interface engineering for efficient and stable perovskite QLEDs
15 septembre 2020
Although the first cadmium selenide (CdSe) QD-based light-emitting devices (QLEDs) were developed in 1994, the first perovskite QLEDs were reported only more than 20 years later.
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