Researchers at Tokyo Institute of Technology (Tokyo Tech) report a unipolar n-type transistor with a world-leading electron mobility performance of up to 7.16 cm2 V-1 s-1. This achievement heralds an exciting future for organic electronics, including the development of innovative flexible displays and wearable technologies.
Lire la suiteResearchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorous tunnel field-effect transistor (TFET) that shows 10-times lower switching power consumption as well as 10,000-times lower standby power consumption than conventional complementary metal-oxide-semiconductor (CMOS) transistors.
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