A Group of Scientists at the Hefei Institutes of Physical Sciences of the Chinese Academy of Sciences Has Developed New P-Type (Positive Hole) Near Infrared (NIR) Transparent Conducting (TC) Films With Ultra-High Conductivity, Unveiling a New Transparent Conducting Material (Advanced Optical Materials, " P-Type Near-Infrared Transparent Delafossite Thin Films With Ultrahigh Conductivity ”). »They have extraordinary properies,» Wei renhuai, a physicist who led the team, “The nir optical transmittance of the movies can reach as high as 85 ~ 60%, While Maintaining the Film Resistance at Room Temperature at a low level. »
In Recent Years, P-Type TC has attractive extensive attention. Although N-Type (Negative Electron) TC is common in Current Market, The Incorporation of P-Type TC and N-Type TC Can Achieve Invisible Active Circuit Heterostructure.
Compared with Traditional Delafossite-Based P-Type TC, The Room-Temperature Conductivity of this novel Tc is much Higher. In addition, the films also exhibits High Near-Infrared Transmittance with a Low Room-Temperature Sheet Resistance.
In The Experiment, based on the first-principle calculations, the scientists found that curho2 showed p-type conducting characteristics and processed a narrow indirect bandgap of 2.31 ev.
Meanwhile, the optical absorption in the nir and visible range is much low. The Larger Rh3+ Ionic Radius Makes The Curho2 Accept Hole-Type Carriers With High Concentration.
The Great Advance in P-Type Nir Tc Curho2 Thin Films, Based on Both Theoretical Calculations and Experimental Results, Will Nordicantly Improve The Development of Future Multifunctional Invisible Optoelectronic Devices.