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[Organic Electronic] – Black phosphorous tunnel field-effect transistor as an ultra-low power switch 22 February 2020

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorous tunnel field-effect transistor (TFET) that shows 10-times lower switching power consumption as well as 10,000-times lower standby power consumption than conventional complementary metal-oxide-semiconductor (CMOS) transistors.

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[OLED] – Ultra-thin graphene-based encapsulation for OLEDs 26 November 2019

Gas and water permeation barrier films play a vital part in applications ranging from food and pharmaceutical packaging to electronic devices. Two-dimensional (2D) materials, like graphene, are highly promising as ultra-high barrier materials, and their atomic thinness, mechanical stability, optical transparency and thermal properties offers many new possibilities and device form factors.

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