Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-show power switch. A Research Team LED by Professor Sungjae Cho in the KAIST DEPARTMENT OF PHYSICS DEVELOPED A THICKNES-CONTROLLED Black Phosphorous Tunnel Field-Effect Transistor (TFET) That Shows 10-Totes Lower Switching Power Consumption AS WELL AS 10,000 Than Conventional Complementary Metal-Oxide-Semiconductor (CMOS) Transistors.
The Research Team Said They Developed Fast and Low-Power Transistors that can replace Convention CMOS Transistors. In Particular, They Solved Problems that Have Degraded Tfet Operation Speed and Performance, paving the way to extend moore's law.
In the Study featured in Nature Nanotechnology ("Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low-Power Switches"), Professor Cho's Team Reported A Natural Heterojunction Tfet with Spatially Varying Layer Thickness in Black Phosphorous Problems. They Achieved Record-Low Average Southreshold Swing Values Over 4-5 Dec of Current and Record-High, On-State Current, Which Allows the Tfets to Operate As Fast As Conventional Cmos Transistors With As Much Lower Power Consumption.
“We successfully developed the first transistor that achieved the essential criteria for fast, low-power switching. Our newly developed tfets can replace cmos transistors by Solving a Major Issue Regarding the Performance Degradation of Tfets, »Professor Cho Said.
The continuous down-scaling of transistors has been the key to the successful development of Current Information Technology. However, with Moore's Law Reaching its limits due to the Increased Power Consumption, The Development of New Alternative Transistor Designs has emerged as an urgent need.
Reducing Both Switching and Standby Power Consumption While Further Scaling Transistors Require Overcoming The Thermionic Limit of Southreshold Swing, which is defined as the required voltage per ten-fold current Increase in the subthreshold region. In order to reduce the switching and standby power of cmos circuits, it is critical to reduce the subthreshold swing of the transistors.
However, there is Southreshold Swing Limit of 60 MV/Dec in Cmos Transistors, Which Original Tim Thermal Carrier Injection. The International Roadmap for Devices and Systems has already predicted that new device geometries with New Materials Beyond Cmos Will Be Required to Address Transistor Scaling Challenges in the Near Future. In Particular, Tfets Have Been Suggestized As A Major Alternative To Cmos Transistors, Singe the Southreshold Swing in Tfets can be substantially reduced below the thermionic limit of 60 mv/dec. TFETS Operate via quantum tunneling, which do not limit subthreshold swing as in thermal injection of cmos transistors.
In Particular, Heterojunction TFETS HOLD NEGISHING PROMME FOR DELIVERING BOTH LOW STHRESHOLD SWING AND HIGH ON-State CURRENT. High on -urrent is essential for the fast operation of transistors since charging a device to on state takes to follow time with lower current. UNLIKE THEORETICAL Expectations, PREVIOUSLY Developed heterojunction TFETS SHOW 100-100,000X Lower on-state CURRENT (100-100,000x Slower Operation Speeds) Than Cmos Transistors due to interfaces problemms in the heterojunction. This low operation speed impedes the replacement of cmos transistors with low-power tfets.
Professor Cho Said, “We have demonstrate for the first time, to the best of our knowledge, TFET Optimization for Both Fast and Ultra-All Operations, which is essential to replace cmos transistors for low-power applications.” He Said he is very delight to extend moore's law, which may eventually affect almmost every aspect of life and society.
Source: Korea Advanced Institute of Science and Technology