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[Nanotechnology] – Modulation of negative differential resistance in black phosphorus transistors. 23 août 2021

Negative differential resistance (NDR), which describes a decrease in electrical current as the applied bias increases …

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[Nanotechnology] – Time-resolved measurement in a memory device 21 février 2020

At the Department for Materials of the ETH in Zurich, Pietro Gambardella and his collaborators investigate tomorrow’s memory devices. They should be fast, retain data reliably for a long time and also be cheap. So-called magnetic « random access memories » (MRAM) achieve this quadrature of the circle by combining fast switching via electric currents with durable data storage in magnetic materials.

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